Skip to main content

ROHM’s New 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance

Kyoto, Japan and Santa Clara, CA, June 17, 2020 (GLOBE NEWSWIRE) — ROHM announces the cutting-edge 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main drive inverter, as well as power supplies for industrial equipment. In recent years, the proliferation of next-generation electric vehicles (xEVs) has been accelerating the development of smaller, lighter, and more efficient electrical systems. In particular, improving efficiency while decreasing the size of the main inverter that plays a central role in the drive system remains among the most important challenges, requiring further advancements in power devices. The capacity of the onboard battery is increasing to improve the cruising range of EVs. And in conjunction with this, the use of higher voltage batteries (800V) is progressing to meet the demand for shorter charging times. To solve these various challenges, designers urgently need SiC power devices capable of providing high withstand voltage with low losses. ROHM, a pioneer in SiC, began mass producing SiC MOSFETs ahead  of the industry in 2010. From early on, ROHM has strengthened its considerable lineup to include AEC-Q101 qualified products allowing the company to hold a large market share for automotive onboard chargers (OBC). For power semiconductors there is often a trade-off relationship between lower ON resistance and short-circuit withstand time, which is required to strike a balance for achieving lower power losses in SiC MOSFETs. ROHM was able to successfully improve this trade-off relationship and reduce ON resistance per unit area by 40% over conventional products without sacrificing short-circuit withstand time by further improving an original double trench structure. In addition, significantly reducing the parasitic capacitance (which is a problem during switching) makes it possible to achieve 50% lower switching loss over our previous generation of SiC MOSFETs. As a result, ROHM’s new 4th Generation SiC MOSFETs are capable of delivering low ON resistance with high-speed switching performance, contributing to greater miniaturization and lower power consumption in a variety of applications, including automotive traction inverters and switching power supplies. Bare chip samples have been made available from June 2020, with discrete packages to be offered in the future. ROHM is committed to continue to expand its SiC power device lineup while combining modularization technologies with peripheral devices such as control ICs designed to maximize performance in order contribute to technical innovation in next-generation vehicles. At the same time, ROHM will provide solutions that resolve customer issues – including web-based simulation tools that reduce application development man-hours and help prevent evaluation problems.Key Features1) Improved trench structure delivers the industry’s lowest ON resistance In 2015, ROHM began mass production of the industry-first trench-type SiC MOSFETs utilizing an original structure. Now, ROHM has successfully reduced ON resistance by 40% compared to conventional products without sacrificing short-circuit withstand time by further improving its original double trench structure. 2) Achieves lower switching loss by significantly reducing parasitic capacitanceGenerally, lower ON resistances and larger currents tend to increase the various parasitic capacitances in MOSFETs, which can inhibit the inherent high-speed switching characteristics of SiC.However, ROHM was able to achieve 50% lower switching loss over conventional products by significantly reducing the gate-drain capacitance (Cgd). TerminologyMOSFETs (Metal Oxide Semiconductor Field Effect Transistors)The most commonly used structure in FETs. Often adopted as switching elements.  Short-Circuit Withstand TimeIndicates the time it takes for a MOSFET to fail due to a short-circuit. Normally, when a short-circuit occurs, a large current exceeding the maximum rating will flow, which can lead to abnormal heat generation, thermal runaway and ultimately, destruction. Longer short-circuit withstand time is in a trade-off relationship with higher performance characteristics, such as ON resistance. Double Trench StructureROHM’s original trench structure. Although the adoption of a trench structure to SiC MOSFETs was shown to be effective in reducing ON resistance, it was necessary to mitigate the electric field generated in the trench gate section to ensure long-term reliability of device. In response, ROHM adopted a unique double-trench structure that minimizes electric field concentration, allowing it to become the first supplier to mass produce trench-type SiC MOSFETs in 2015. Parasitic CapacitanceInherent capacitance that occurs due to the physical structure within electronic components. In the case of a MOSFET, there is a gate-source capacitance (Cgs), gate-drain capacitance (Cgd), and drain-source capacitance (Cds). Cgs and Cgd are determined by the capacitance of the gate oxide film, while Cds is the junction capacitance of the parasitic diode. Trench StructureThe word ‘trench’ means a narrow excavation or groove. This design involves forming a groove on the chip surface and the gate on the MOSFET side wall. JFET resistances don’t exist compared to a planar-type MOSFET configuration, making it possible to achieve a finer structure over planar topologies – resulting in an ON resistance close to the original performance of the SiC material.Attachment4GSiC_Press PictureJayme Pontious
ROHM Semiconductor
+1-408-720-1900
jpontious@rohmsemiconductor.com

Disclaimer & Cookie Notice

Welcome to GOLDEA services for Professionals

Before you continue, please confirm the following:

Professional advisers only

I am a professional adviser and would like to visit the GOLDEA CAPITAL for Professionals website.

Important Notice for Investors:

The services and products offered by Goldalea Capital Ltd. are intended exclusively for professional market participants as defined by applicable laws and regulations. This typically includes institutional investors, qualified investors, and high-net-worth individuals who have sufficient knowledge, experience, resources, and independence to assess the risks of trading on their own.

No Investment Advice:

The information, analyses, and market data provided are for general information purposes only and do not constitute individual investment advice. They should not be construed as a basis for investment decisions and do not take into account the specific investment objectives, financial situation, or individual needs of any recipient.

High Risks:

Trading in financial instruments is associated with significant risks and may result in the complete loss of the invested capital. Goldalea Capital Ltd. accepts no liability for losses incurred as a result of the use of the information provided or the execution of transactions.

Sole Responsibility:

The decision to invest or not to invest is solely the responsibility of the investor. Investors should obtain comprehensive information about the risks involved before making any investment decision and, if necessary, seek independent advice.

No Guarantees:

Goldalea Capital Ltd. makes no warranties or representations as to the accuracy, completeness, or timeliness of the information provided. Markets are subject to constant change, and past performance is not a reliable indicator of future results.

Regional Restrictions:

The services offered by Goldalea Capital Ltd. may not be available to all persons or in all countries. It is the responsibility of the investor to ensure that they are authorized to use the services offered.

Please note: This disclaimer is for general information purposes only and does not replace individual legal or tax advice.